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TYPICAL PERFORMANCE CURVES
APT15GT120BR APT15GT120BR_SR(G) APT15GT120SR APT15GT120BR(G) APT15GT120SR(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 50KHz * Ultra Low Leakage Current
G C
(B)
TO -2 47
D3PAK
(S)
C G E
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT15GT120BR_SR(G) UNIT Volts
1200 30 36 18 45 45A @ 960V 250 -55 to 150 300
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1mA) Gate Threshold Voltage (VCE = VGE, I C = 0.6mA, Tj = 25C) MIN TYP MAX Units
1200 4.5 2.5
2 2
5.5 3.0 3.8
6.5 3.6
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C)
I CES I GES
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
100 TBD 480
A nA
7-2009 052-6266 Rev D
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT15GT120BR_SR(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 15A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 15A
4 5
MIN
TYP
MAX
UNIT
1250 100 65 10 105 10 60 45 10 11 85 35 585 800 260 10 11 95 42 590 1440 340 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
RG = 5 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 15A RG = 5
55
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.50 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
7-2009 052-6266 Rev D
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
45
V
GE
APT15GT120BR_SR(G)
60 15V 14V 50 13V 40 12V 30 11V 20 10V 9V 8V 0 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
= 15V
40 IC, COLLECTOR CURRENT (A) 35 TJ = -55C 30 25 TJ = 25C 20 15 10 5 0 0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
TJ = 125C
IC, COLLECTOR CURRENT (A)
10
FIGURE 1, Output Characteristics(TJ = 25C) 45 40 IC, COLLECTOR CURRENT (A) 35 30 25 20 TJ = -55C 15 TJ = 25C 10 TJ = 125C 5 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
VCE = 960V
I = 15A C T = 25C
J
VCE = 240V VCE = 600V
8 6 4 2 0 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge 120
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
6 5 IC = 30A 4 IC = 15A 3 IC = 7.5A
5 4
IC = 30A IC = 15A
3 2 IC = 7.5A
2 1
1 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
9
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 45
0 -50
IC, DC COLLECTOR CURRENT(A)
40 35 30 25 20 7-2009 052-6266 Rev D 15 10 5 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
APT15GT120BR_SR(G)
14 12 10 8 6 4
VCE = 600V
120 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
100
80
VGE =15V,TJ=125C VGE =15V,TJ=25C
60
40
2 TJ = 25C, TJ =125C 0
RG = 5 L = 100 H
20 VCE = 800V RG = 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 45 40 35
RG = 5, L = 100H, VCE = 800V
10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 40 35 30 tr, RISE TIME (ns) tf, FALL TIME (ns) 25 20 15 10 5 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 EON2, TURN ON ENERGY LOSS (J) 3500 3000 2500 2000 1500 1000 500
TJ = 25C
V = 800V CE V = +15V GE R = 5
G
5
0
L = 100 H
5
RG = 5, L = 100H, VCE = 800V
30 25 20 15 10 5
TJ = 25C, VGE = 15V
TJ = 125C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1000 EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 5
G
0
800
TJ = 125C
TJ = 125C
600
400
200
TJ = 25C
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 2000 1000 0
Eon2,7.5A Eon2,15A Eoff,15A Eoff,7.5A Eoff,30A
V = 800V CE V = +15V GE T = 125C
J
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 5
G
0
Eon2,30A
3500 3000 2500 2000 1500
Eon2,30A
7-2009
Eon2,15A
1000 500 0 0
Eon2,7.5A Eoff,7.5A
Eoff,30A
Rev D
Eoff,15A
052-6266
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
2,000 1,000 C, CAPACITANCE ( F) 500 Cies IC, COLLECTOR CURRENT (A) 50 45 40 35 30 25 20 15 10 5 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 10
APT15GT120BR_SR(G)
P
100 50
Coes
Cres
200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.60
ZJC, THERMAL IMPEDANCE (C/W)
0.50 D = 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0 10-5 0.05 10-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
400 FMAX, OPERATING FREQUENCY (kHz)
100 50
10 5
T = 125C J T = 75C C D = 50 % V = 800V CE R = 5
G
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
0
052-6266
Rev D
7-2009
APT15GT120BR_SR(G)
Gate Voltage
APT15DQ120
10% TJ = 125C td(on)
V CC
IC
V CE
tr Collector Current 90% 10%
5% Collector Voltage
5%
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) tf Collector Voltage 90% 10% 0 Collector Current
TJ = 125C
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
Collector (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector Emitter
Heat Sink (Collector) and Leads are Plated
7-2009
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
052-6266
Rev D Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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